| PART |
Description |
Maker |
| HGT1S20N35G3VL HGTP20N35G3VL HGT1S20N35G3VLS HGT1S |
20A/ 350V N-Channel/ Logic Level/ Voltage Clamping IGBTs
20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 20A I(C) | TO-263AB
XC9536-6PC44C - NOT RECOMMENDED for NEW DESIGN
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| BF994SA BF994SB BF994S BF994 |
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
CAP CER 47PF 50V 5% C0G 0603
|
Vishay Telefunken
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| DN3135NW |
N-Channel Depletion-Mode Vertical DMOS FETs N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Supertex, Inc.
|
| SSD5501 XSD5501 |
N-Channel Depletion-Mode 4-Channel DMOS FET Array
|
CALOGIC[Calogic, LLC]
|
| DN2530N8-G DN2530N3-G |
N-Channel Depletion-Mode Vertical DMOS FETs 200 mA, 300 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243AA
|
Supertex, Inc.
|
| BF998RAW-GS08 BF998RBW-GS08 BF998A-GS08 BF998RA-GS |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
VISHAY SEMICONDUCTORS
Vishay Siliconix
|
| IRF323 IRF320 |
2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs
|
New Jersey Semi-Conductor Products, Inc.
|
| CPC5603 CPC5603C CPC5603CTR |
N Channel Depletion Mode FET
|
Clare, Inc.
|
| 2N5462 2N5460 2N5461 2N5460-D |
JFET Amplifiers P-Channel - Depletion
|
ONSEMI[ON Semiconductor]
|
